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| Photodiode-Chip Preliminary Wavelength range Infrared, selective Type Integrated filter 23.05.2007 Technology GaAs EPC-880-0.9-1 rev. 01/07 Electrodes P (anode) up 860 typ. dimensions (m) typ. thickness 300 m anode gold alloy, 1.5 m cathode gold alloy, 0.5 m O120 PD-08 Description Infrared-selective photodiode with narrow response range (810 - 950 nm) Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25C, unless otherwise specified Parameter Active area Operating temperature range Storage temperature range Test onditions Symbol A Tamb Tstg Value 0.72 -40 to +125 -40 to +125 Unit mm C C Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Reverse voltage3 Dark current Peak sensitivity Spectral range at 50 % Responsivity at P1 Responsivity at P2 IR = 10 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V Symbol VR ID P 0.5 S S 0,5 820 0.15 0.25 0.55 115 Min 5 1.0 890 935 2.5 Typ Max Unit V nA nm nm A/W A/W nm Spectral bandwidth at 50% 1 2 Measured on bare covered chip on TO-18 header Measured on epoxy covered chip on TO-18 header 3 information only Labeling Type EP-880-0.9-1 Typ. ID [pA] Typ. S[A/W] Lot N Quantity Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip Preliminary 23.05.2007 EPC-880-0.9-1 rev. 01/07 Typical spectral response [A/W] 0,6 0,5 0,4 0,3 0,2 0,1 0,0 700 750 800 850 900 Wavelength [nm] 950 1000 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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